Datasheet Summary
N-Channel Trench Power MOSFET
General Description
The CS8205G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications.
Schematic Diagram
Features
- VDS = 19.5V,ID =4.1A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 39mΩ @ VGS =2.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery protection
- Load switch
- Power management
Marking and pin Assignment SOT23-6 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
8205G
CS8...