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CS8205G - N-Channel Trench Power MOSFET

General Description

The CS8205G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching applications.

Key Features

  • VDS = 19.5V,ID =4.1A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 39mΩ @ VGS =2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number CS8205G
Manufacturer CASS
File Size 672.54 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS8205G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CS8205G N-Channel Trench Power MOSFET General Description The CS8205G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Schematic Diagram Features ● VDS = 19.5V,ID =4.1A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 39mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management Marking and pin Assignment SOT23-6 top view Package Marking and Ordering Information Device Marking Device Device Package 8205G CS8205G SOT23-6 Reel Size Ø180mm Tape width 8mm Quantity 3000 units Table 1.