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CSD40P310 - P-Channel Trench Power MOSFET

General Description

The CSD40P310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V.

This device is suitable for use as a wide variety of applications.

Key Features

  • VDS = -40V,ID =-20A RDS(ON) < 42mΩ @ VGS =-10V RDS(ON) < 78mΩ @ VGS =-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number CSD40P310
Manufacturer CASS
File Size 696.73 KB
Description P-Channel Trench Power MOSFET
Datasheet download datasheet CSD40P310 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Trench Power MOSFET CSD40P310 General Description The CSD40P310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = -40V,ID =-20A RDS(ON) < 42mΩ @ VGS =-10V RDS(ON) < 78mΩ @ VGS =-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD40P310 CSD40P310 TO-252 Reel Size 325mm Table 1.