CASS CSD60N53
The CSD60N53 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).| Part No. | CSD60N53 |
|---|---|
| Datasheet | CSD60N53 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Those devices are suitable for use in PWM, load switching and general purpose applications.FEATURES
● VDS=60V; ID=88A RDS(ON)<6.6mΩ @ VGS=10V● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Power switching application
● load switching CSD60N53 To-252 Top View Schematic Diagram VDS =60V ID = 88A RDS(ON)= 5.5mΩ Package Marking and Ordering Information Device Marking Device Device Package CSD60N53 CSD60N53 TO-252 Reel Size - Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) PD EAS Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single Pulse Avalanche Energy (Note 2
