CSP30N75
CSP30N75 is N-Channel Trench Power MOSFET manufactured by CASS.
N-Channel Trench Power MOSFET
General Description
The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
- VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V
- High density cell design for ultra low Rdson
- Lead free product is acquired
Application
- Battery protection
- Load switch
- Power management
100% UIS TESTED!
Schematic Diagram Marking and pin Assignment
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS ID IDM (pluse)
Gate-Source Voltage (VDS=0V)
Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2)
PD Maximum...
