CASS CSP30N75
The CSP30N75 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.| Part No. | CSP30N75 |
|---|---|
| Datasheet | CSP30N75 Download |
| Manufacturer | CASS |
| Description | N-Channel Trench Power MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
● VDS = 30V,ID =12A RDS(ON) < 11 mΩ @ VGS =10V RDS(ON) < 16 mΩ @ VGS =4.5V● High density cell design for ultra low Rdson
● Lead free product is acquired Application
● Battery protection
● Load switch
● Power management 100% UIS TESTED! CSP30N75 Schematic Diagram Marking and pin Assignment Package Marking and Ordering Information Device Marking Device Device Package CSP30N75 CSP30N75 SOP-8 Reel Size Ø330mm Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS ID IDM (pluse) Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Continuous@ Current-Pulsed (Note 2) PD Maximum Power
