Continental Device India 2N1613
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | 2N1613 |
|---|---|
| Datasheet | 2N1613 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Voltage (RBE<10Ω) VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) Junction to Case Rth(j-c)ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Breakdown Voltage VCER(sus)* IC=100mA,RBE <10Ω Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 Emitter Base Breakdown Voltage BVEBO IE =100µA, IC=0 Collector Leakage Current ICBO VCB=60V, IE=0 VCB=60V, IE=0,TA=150ºC Emitter Leakage Current IE
