2N1613 - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Description

SYMBOL Collector Emitter Voltage (RBE

CDIL

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Datasheet Details

Part number	2N1613
Manufacturer	CDIL
File Size	97.05 KB
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	2N1613 Datasheet
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Voltage (RBE<10Ω) VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Breakdown Voltage VCER(sus)* IC=100mA,RBE <10Ω Collector Base Breakdo

Published: Jun 18, 2017 |