Datasheet Details
| Part number | 2N1613 |
|---|---|
| Manufacturer | CDIL |
| File Size | 97.05 KB |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Download | 2N1613 Download (PDF) |
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| Part number | 2N1613 |
|---|---|
| Manufacturer | CDIL |
| File Size | 97.05 KB |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Download | 2N1613 Download (PDF) |
|
|
|
SYMBOL Collector Emitter Voltage (RBE<10Ω) VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation @ Ta=25ºC PD Derate Above 25ºC Power Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Ambient Rth(j-a) Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL Collector Emitter Breakdown Voltage VCER(sus)* IC=100mA,RBE <10Ω Collector Base Breakdown Voltage BVCBO IC=100µA, IE=0 Emitter Base Breakdown Voltage BVEBO IE =100µA, IC=0 Collector Leakage Current ICBO VCB=60V, IE=0 VCB=60V, IE=0,TA=150ºC Emitter Leakage Current IE
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified.
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| Part Number | Description |
|---|---|
| 2N1711 | NPN SILICON PLANAR TRANSISTOR |
| 2N1893 | NPN SILICON PLANAR TRANSISTORS |