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2N2270 Datasheet PDF

Continental Device India 2N2270

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. 2N2270
Datasheet 2N2270 Download
Manufacturer
Continental Device India
Description NPN Silicon Planar Transistor
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2N2270 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Collector Emitter Voltage Collector Emitter Voltage, RBE < 10Ω Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Ambient in free air Junction to Case SYMBOL VCEO VCER VCBO VEBO IC PD PD Tj, Tstg VALUE 45 60 60 7.0 1.0 1.0 5.71 5.0 28.6 - 65 to +200 UNIT V V V V A W mW/ ºC W mW/ ºC ºC Rth (j-a) Rth (j-c) 175 35 ºC/W ºC/W

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless specified otherwise )

DESCRIPTION

SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Collector Emitter Voltage VCER IC=1mA, RBE=10Ω Collector Emitter Voltage VCBO Collector Base Voltage IC=100µA, IE=0 V IE=100µA, IC=0 Emitter Base Voltage EBO ICBO VCB=60V, IE=0 Collector Cut Off Current VCB=60V, IE=0, Ta=150ºC Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Curren...
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