• Part: 2N2906
  • Description: PNP SILICON PLANAR SWITCHING TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 138.33 KB
Download 2N2906 Datasheet PDF
Continental Device India
2N2906
2N2906 is PNP SILICON PLANAR SWITCHING TRANSISTORS manufactured by Continental Device India.
DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg VALUE 40 60 5 600 400 2.28 1.8 10.3 - 65 to +200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage - VCEO IC=10m A, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICEX VCE=30V, VBE=0.5V Collector Cut Off Current ICBO VCB=50V, IE=0 VCB=50V, IE=0, Ta=150ºC Base Current IB VCE=30V, VBE=0.5V MIN 40 60 5 UNIT...