2N2906 - PNP SILICON PLANAR SWITCHING TRANSISTORS

CDIL

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 40 60 5 600

📥 Download Datasheet

2N2906 pnp silicon planar switching transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	2N2906
Manufacturer	CDIL
File Size	138.33 KB
Description	PNP SILICON PLANAR SWITCHING TRANSISTORS
Datasheet	2N2906 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N2906	PNP switching transistors	NXP
2N2906	Silicon Planar PNP Transistor	STMicroelectronics
2N2906	PNP Silicon Planar Epitaxial Transistors	Micro Electronics
2N2906	PNP Silicon Annular Hermetic Transistors	Motorola
2N2906	General Purpose Amplifier Transistors	Comset Semiconductor

Other Datasheets by CDIL

Part Number	Description
2N2906A	PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2904	PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2905	PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2907	PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2907A	PNP SILICON PLANAR SWITCHING TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906 2N2907 TO-18 Metal Can Package Switching and Linear Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 40 60 5 600 400 2.28 1.8 10.