2N3055HV - NPN Power Transistor

CDIL

General Description

Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Ts

📥 Download Datasheet

2N3055HV npn power transistor by CDIL - Datasheet Preview

Datasheet Details

Part number	2N3055HV
Manufacturer	CDIL
File Size	222.32 KB
Description	NPN Power Transistor
Datasheet	2N3055HV Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N3055HV	NPN POWER TRANSISTOR	TRANSYS Electronics Limited
2N3055H	15A Power Transistors	Multicomp
2N3055H	Silicon Power Transistor	USHA
2N3055H	Silicon NPN Power Transistor	Inchange Semiconductor
2N3055H	Power Transistor	Seme LAB

Other Datasheets by CDIL

Part Number	Description
2N3053	NPN SILICON PLANAR TRANSISTOR
2N3053A	NPN SILICON PLANAR TRANSISTOR
2N3019	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3020	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3250	PNP SILICON PLANAR SWITCHING TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L-000019.3 NPN POWER TRANSISTOR 2N3055HV TO-3 Metal Can Package Switching Regulator and Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg VALUE 100 100 7.0 15 7.