Continental Device India 2N3055HV
NPN Power Transistor
| Part No. | 2N3055HV |
|---|---|
| Datasheet | 2N3055HV Download |
| Manufacturer |  Continental Device India |
| Description | NPN Power Transistor |
| Buy | Stock & Price |
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage ( Open Emitter) Collector Emitter Voltage (Open Base) Emitter Base Voltage Collector Current Base Current Total Power Dissipation up toTc=25ºC Junction Temperature Storage Temperature THERMAL RESISTANCE Junction to Case Rth(j-c) 1.75 ºC/W SYMBOL VCBO VCEO VEBO IC IB Ptot Tj Tstg VALUE 100 100 7.0 15 7.0 100 200 - 65 to +200 UNITS V V V A A W ºC ºCELECTRICAL CHARACTERISTICS
(TC=25ºC unless specified otherwise)DESCRIPTION
Breakdown Voltages VCEO(sus)* VCBO VEBO ICEX ICEX Collector Cut off Current Emitter Cut off Current Collector Emitter Saturation Voltage Base Emitter on Voltage DC Current Gain ICEO IEBO VCE(Sat) * VBE(on) * hFE* hFE* IC=200mA, IB=0 IC=1mA, IE= 0 IE=1mA, IC =0 VCE=100V, VBE=(off)=1.5V Tc=150ºC VCE=100V, VBE=(off)=1.5V VCE=30V, IB=0 VBE=7V, IC=0 IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V IC=4A, VCE=4V IC=10A, VCE=4V 100 100 7 1.0 V V V mA SYMBOL TEST CONDITION MIN MAX UNITS Collector Cut off Cu...
