Continental Device India 2N3500
NPN SILICON PLANAR RF TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 2N3498 2N3499 2N3500 2N3501 100 150 100 150 6 500 300 1.0 5.71 5.0 28.6 -65 to +200 UNITS V V V mA W mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) Rth(j-c) 175 ºC/W 35 ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage 2N3498/3499 2N3500/3501 BVCEO* IC=10mA,IB=0 VALUE MIN TYP MAX UNITS