Part 2N3500
Description NPN SILICON PLANAR RF TRANSISTORS
Category Transistor
Manufacturer Continental Device India
Size 187.23 KB
Continental Device India

2N3500 Overview

Description

SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 2N3498 2N3499 2N3500 2N3501 100 150 100 150 6 500 300 1.0 5.71 5.0 28.6 -65 to +200 UNITS V V V mA W mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 175 ºC/W 35 ºC/W DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage 2N3498/3499 2N3500/3501 BVCEO* IC=10mA,IB=0 VALUE MIN TYP MAX UNITS.