Continental Device India 2N3701
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | 2N3701 |
|---|---|
| Datasheet | 2N3701 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
.DESCRIPTION
SYMBOL VALUE Collector -Base Voltage VCBO 140 Collector -Emitter Voltage VCEO 80 Emitter -Base Voltage VEBO 7.0 Collector Current IC 1.0 Power Dissipation @Ta=25 deg C PD 500 Derate Above 25 deg C 2.85 @TC=25 deg C PD 1.8 Derate Above 25 deg C 10.6 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 70 Junction to Ambient Rth(j-a) 245ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector-Cut off Current ICBO VCB=90V, IE=0 - MAX 10 UNIT V V V A mW mW/deg C W mW/deg C deg C deg C/W deg C/W UNIT nA Emitter-Cut off Current Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Emitter (Sat) Voltage Base Emitter (Sat) Voltage DC Current Gain VCB=90V, IE=0 - 10 uA IEBO VCBO VEB=5V, IC=0 IC=100uA, IE=-0 - 10 nA 140 - V VCEO* IC=30mA, IB=0 80 - V VEBO IE=100uA, IC=-0 7.0 - V VCE(Sat)* IC=150mA,IB=15mA - 0.
