• Part: 2N5087
  • Description: PNP SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 75.17 KB
Download 2N5087 Datasheet PDF
Continental Device India
2N5087
2N5087 is PNP SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
- Part of the 2N5086 comparator family.
DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD Tj, Tstg VALUE 50 50 3.0 50 625 5.0 1.5 12 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) - Rth (j-a) 83.3 200 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP Collector Emitter Voltage - VCEO IC=1m A, IB=0 Collector Base Voltage VCBO IC=100µA, IE=0 Collector Cut off Current ICBO VCB=10V, IE = 0 VCB=35V, IE = 0 Emitter Cut off Current IEBO VEB=3V, IC = 0 DC...