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2N5087 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Download the 2N5087 datasheet PDF. This datasheet also covers the 2N5086 variant, as both devices belong to the same pnp silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 50 50 3.0 50

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Note: The manufacturer provides a single datasheet file (2N5086-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5087
Manufacturer CDIL
File Size 75.17 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet 2N5087 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS 2N5086 2N5087 TO-92 Plastic Package EBC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 50 50 3.0 50 625 5.0 1.5 12 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) *Rth (j-a) 83.