Continental Device India 2N5087
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | 2N5087 |
|---|---|
| Datasheet | 2N5087 Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 50 50 3.0 50 625 5.0 1.5 12 - 55 to +150 THERMAL CHARACTERISTICS Junction to Case Junction to Ambient in free air Rth (j-c) *Rth (j-a) 83.3 200ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN TYP Collector Emitter Voltage *VCEO IC=1mA, IB=0 50 Collector Base Voltage VCBO IC=100µA, IE=0 50 Collector Cut off Current ICBO VCB=10V, IE = 0 VCB=35V, IE = 0 Emitter Cut off Current IEBO VEB=3V, IC = 0 DC Current
