Datasheet Details
| Part number | 2N5322 |
|---|---|
| Manufacturer | CDIL |
| File Size | 63.50 KB |
| Description | SILICON POWER SWITCHING TRANSISTORS |
| Datasheet | 2N5322 2N5320 Datasheet (PDF) |
|
|
Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package Medium Power Amplifier and.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N5322 |
|---|---|
| Manufacturer | CDIL |
| File Size | 63.50 KB |
| Description | SILICON POWER SWITCHING TRANSISTORS |
| Datasheet | 2N5322 2N5320 Datasheet (PDF) |
|
|
|
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N5320 75 100 7 2N5321 2N5322 50 75 75 100 5 7 2.0 1.0 1 5.71 10 57.14 - 65 to +200 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 175 17.5 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=100mA, IB=0 2N5320/5322 75 2N5321/5323 50 Collector Cut Off Current ICEX VCE=70V, VBE=1.5V, Tc=150ºC 2N5320/5322 VCE=45V, VBE=1.5V, Tc=150ºC 2N5321/5323 VCE=100V, VBE=1.5V 2N5320/5322 Emitter Cut Off Current VCE=75V, VBE=1.5V 2N5321/5323 IEBO VBE=5V, IC=0 2N5321/5323 VBE=7V, IC=0 2N5320/5322 2N5323 50 75 5 UNITS V V V A A W mW/ ºC W mW/ ºC ºC ºC/W ºC/W MAX 5 UNITS V V mA 5 mA 100 µA 100 µA 100 µA 100 µA Continental Device India Limited Data Sheet Page 1 of 4 SILICON POWER SWITCHING TRANSISTORS 2N5320, 2N5321 NPN 2N5322, 2N5323 PNP TO-39 Metal Can Package ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain *hFE IC=1A, VCE=2V 2N5320/5322 Collector Emitter Saturation Voltage *VCE (sat) Base Emitter On Voltage *VBE (on) IC=0.5A, VCE=4V 2N5320/5322 2N5321/5323 IC=500mA, IB=50mA 2N5320 2N5321 2N5322 2N5323 IC=500mA, VCE=4V 2N5320/5322 2N5321/5323 DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe IC=50mA,VCE=4V, f=10MHz SWITCHING CHARACTERISTICS Turn
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N5322 | SMALL SIGNAL PNP TRANSISTORS | STMicroelectronics |
 |
2N5322 | 10 Watt NPN-PNP Silicon Transistor | Fairchild Semiconductor |
 |
2N5322 | Medium Power Transistors | Multicomp |
 |
2N5322 | COMPLEMENTARY SILICON SWITCHING TRANSISTORS | Central Semiconductor |
 |
2N5322 | SWITCHING TRANSISTOR | Motorola |
| Part Number | Description |
|---|---|
| 2N5320 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5321 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5323 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5086 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5087 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5088 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5294 | NPN PLASTIC POWER TRANSISTOR |
| 2N5296 | NPN PLASTIC POWER TRANSISTOR |
| 2N5298 | NPN PLASTIC POWER TRANSISTOR |