Continental Device India 2N5322
SILICON POWER SWITCHING TRANSISTORS
| Part No. | 2N5322 |
|---|---|
| Datasheet | 2N5322 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON POWER SWITCHING TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current - Continuous Base Current Power Dissipation@ Ta=25ºC Derate Above 25ºC Power Dissipation@ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg 2N5320 75 100 7 2N5321 2N5322 50 75 75 100 5 7 2.0 1.0 1 5.71 10 57.14 - 65 to +200 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 175 17.5ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO IC=100mA, IB=0 2N5320/5322 75 2N5321/5323 50 Collector Cut Off Current ICEX VCE=70V, VBE=1.5V, Tc=150ºC 2N5320/5322 VCE=45V, VBE=1.5V, Tc=150ºC 2N5321/5323 VCE=100V, VBE=1.5V 2N5320/5322 Emitter Cut Off Current VCE=75V, VBE=1.5V 2N5321/5323 IEBO VBE=5V, IC=0 2N5321/5323 VBE=7V, IC=0 2N5320/5322 2N5323 50 75 5 UNITS V V V A A W mW/ ºC...
