Datasheet Details
| Part number | 2N5770 |
|---|---|
| Manufacturer | CDIL |
| File Size | 122.04 KB |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Datasheet | 2N5770-CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 TO-92 Plastic Package EBC VHF/UHF Amplifier Mixer and Oscillator Applications.
| Part number | 2N5770 |
|---|---|
| Manufacturer | CDIL |
| File Size | 122.04 KB |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Datasheet | 2N5770-CDIL.pdf |
|
|
|
SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperature Range Tj, Tstg VALUE 15 30 4.5 50 350 2.8 850 6.8 - 55 to +150 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=3mA, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICBO VCB=15V, IE = 0 Collector Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Ba
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5770 | NPN RF Transistor | Fairchild Semiconductor |
 |
2N5770 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| Part Number | Description |
|---|---|
| 2N5086 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5087 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5088 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5294 | NPN PLASTIC POWER TRANSISTOR |
| 2N5296 | NPN PLASTIC POWER TRANSISTOR |
| 2N5298 | NPN PLASTIC POWER TRANSISTOR |
| 2N5320 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5321 | SILICON POWER SWITCHING TRANSISTORS |
| 2N5322 | SILICON POWER SWITCHING TRANSISTORS |