Continental Device India 2N5770
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | 2N5770 |
|---|---|
| Datasheet | 2N5770 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation@ Ta=25ºC Derate Above 25ºC PD Power Dissipation@ Tc=25ºC Derate Above 25ºC PD Operating And Storage Junction Temperature Range Tj, Tstg VALUE 15 30 4.5 50 350 2.8 850 6.8 - 55 to +150ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=3mA, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut Off Current ICBO VCB=15V, IE = 0 Collector Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Ba
