Continental Device India 2N6718
NPN SILICON PLANAR EPITAXIAL TRANSISTOR
| Part No. | 2N6718 |
|---|---|
| Datasheet | 2N6718 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)DESCRIPTION
SYMBOL Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation Operating And Storage Junction Temperature Range VCBO VCEO VEBO IC PD Tj, Tstg VALUE 100 100 5 1.5 850 -55 to +150ELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Specified Otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Cut off Current Emitter Cut off Current DC Current Gain Collector Emitter Saturation Voltage Transition Frequency ICBO IEBO hFE VCE(sat) fT VCB=80V, IE=0 VEB=4V, IC=0 IC=50mA,VCE=1V IC=250mA,VCE=1V IC=500mA,VCE=1V IC=350mA,IB=35mA VCE=1V, IC=200mA, MIN 80 50 20 50 UNIT V V V A mW ºC MAX 0.1 0.1 250 0.35 500 UNIT µA µA V MHz Continental Device India Limited Data Sheet Page
