Continental Device India 2N6731
NPN SILICON PLANNAR MEDIUM POWER TRANSISTOR
| Part No. | 2N6731 |
|---|---|
| Datasheet | 2N6731 Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANNAR MEDIUM POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(Ta=25ºC, unless otherwise specified) PARAMETERS SYMBOL VALUE Collector-Base Voltage VCBO 100 Collector-Emitter Voltage VCEO 80 Emitter-Base Voltage VEBO 5 Peak Pulse Current ICM 2 Continuous Collector Current IC 1 Power Dissipation at Tamb=25ºC Ptot 1 Operating and Storage Temperature Range Tj;Tstg -55 to 200 UNIT V V V A A W ºCELECTRICAL CHARACTERISTICS
(Ta=25ºC) PARAMETER SYMBOL TEST CONDITION Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO IC=100µA, IE=0 IC=10mA, IB=0,* IE= 1mA, IC=0 VCB=80V, IE=0 VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) IB=35mA, IC=350mA * Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(on) hFE VCE=2V, IC=350mA * VCE=2V, IC=10mA * VCE=2V, IC=350mA * Transition Frequency fT IC=200mA, VCE=5V, f=20MHz Collector-Base Capacitance CCB * Measured under pulsed conditions, Pulse width=300 µs, Duty cycle ≤2% MIN.