Continental Device India 2N930A
NPN SILICON PLANAR TRANSISTORS
| Part No. | 2N930A |
|---|---|
| Datasheet | 2N930A Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg 2N930 45 45 5 30 300 1.72 600 3.42 - 65 to +200 2N930A 60 60 6 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 292 2N930 >45 >45 >5 <10 <2 <10 <10 <10 <1.0 0.7 - 0.9 100-300 >20 >150 <600 <600 2N930A >60 >60 >6 <2 <2 <2 <2 <2 <0.5 0.7 - 0.9 >60 100-300 >30 ºC/W ºC/W UNIT V V V nA nA nA nA µA V VELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Collector Cut Off Current Collector...
