BAS21 - SILICON PLANAR HIGH SPEED DIODES

CDIL

Download the BAS21 datasheet PDF. This datasheet also covers the BAS19 variant, as both devices belong to the same silicon planar high speed diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Non Repetitive Peak Forward Current t=1µs t=1s IFSM IFSM Average Rectified Forward Current (averaged over any 20 ms period) IF (AV) Forward Current (DC) Repetitive Peak Forward Current Total Power Dissipation

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BAS21 silicon planar high speed diodes by CDIL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BAS19-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BAS21
Manufacturer	CDIL
File Size	125.91 KB
Description	SILICON PLANAR HIGH SPEED DIODES
Datasheet	BAS21 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BAS216WS	SILICON EPITAXIAL SWITCHING DIODE
BAS20	SILICON PLANAR HIGH SPEED DIODES
BAS16	SILICON PLANAR SWITCHING DIODE
BAS19	SILICON PLANAR HIGH SPEED DIODES
BAS521	HIGH VOLTAGE SWITCHING DIODE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED DIODES 3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE 12 BAS19, BAS20, BAS21 SOT-23 Formed SMD Package Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 High-Speed Switching Diodes in a Microminiature Plastic Envelope. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Continuous Reverse Voltage VR Repetitive Peak Reverse Voltage VRRM Non Repetitive Peak Forward Current t=1µs t=1s IFSM IFSM Average Rectified Forward Current (averaged over any 20 ms period) IF (AV) Forward Current (DC) Repetitive Peak Forward Current Total Power Dissipation *IF IFRM PD Storage Temperature Range Junction Temperature Tstg Tj BAS19 100 120 BAS20 150 200 2.5 0.