Continental Device India BAT42W
SILICON PLANAR SCHOTTKY DIODES
| Part No. | BAT42W |
|---|---|
| Datasheet | BAT42W Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR SCHOTTKY DIODES |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb=25ºC Repetitive Peak Forward Current tp <1ms δ <0.5, Tamb=25ºC SYMBOL VRRM IF IFRM VALUE 30 200 500 Surge Forward Current at tp <10m, Tamb=25ºC *IFSM 4.0 Power Dissipation Ta=65ºC Junction Temperature Ambient Operating Temperature Range Storage Temperature Range *Ptot Tj Tamb Tstg 200 125 - 55 to +125 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air *Rth (j-a) 300 *Valid provided that electrodes are kept at ambient temperature RICAL CHARACTERISTICS (Tj=25ºC unless specified otherwise)DESCRIPTION
Reverse Breakdown Voltage Reverse Current Forward Voltage SYMBOL V(BR)R **IR **VF TEST CONDITION IR=100µA VR=25V VR=25V, Tj=100ºC IF=200mA IF=10mA BAT42W IF=50mA BAT42W IF=2mA BAT43W IF=15mA BAT43W DYNAMIC CHARACTERISTICSDESCRIPTION
SYMBOL TEST CONDITION Diode Capacitance Cd VR=1V, f=1MHz MIN 30 0.26 MAX 0.5 100 1.0 0.40 0.65 0.33 0.45 MIN MAX TYP 7.0 Reverse Recovery Time tr...
