Continental Device India BAT54
SILICON PLANAR SCHOTTKY DIODES
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Forward Current t<1s Power Dissipation Ta=25ºC Storage Temperature Range Junction Temperature THERMAL RESISTANCE Junction to Ambient in free air SYMBOL VRRM IF IFRM IFSM PD Tstg Tj Rth (j-a) VALUE 30 200 300 600 230 - 55 to +150 125 430ELECTRICAL CHARACTERISTICS
(Ta=25º C unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN Forward Voltage VF IF=0.1mA *IF=1mA IF=10mA Reverse Current *IF=30mA IF=100mA IR VR=25V Reverse Breakdown Voltage V(BR)R IR=100µA 30 DYNAMIC CHARACTERISTICSDESCRIPTION
Diode Capacitance Reverse Recovery Time When Switched From SYMBOL Cd trr TEST CONDITION VR=1V, f=1MHz IF=10mA to IR=10mA, measured at IR=1mA, RL=100Ω MIN *Temperature coefficient of forward voltage - 0.6 %K at IF=1mA - 0.3 %K at IF=30mA BAT54Rev_1 071105E Continental Device India Limited Data Sheet MAX 0.24 0.32 0.40 0.50 1.00 2.0 MAX 15 5 UNIT V...