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BAV101 Datasheet PDF

Continental Device India BAV101

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. BAV101
Datasheet BAV101 Download
Manufacturer
Continental Device India
Description HIGH SPEED SILICON DIODES
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BAV101 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

Continuous Reverse Voltage Repetitive Peak Reverse Voltage Average Rectified Forward Current Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Forward Current t=1 s t=1 µs Power Dissipation up to Ta=25ºC Storage Temperature Junction Temperature THERMAL RESISTANCE Junction to Ambient in free air SYMBOL VR VRRM IF (AV) IF IFRM IFSM IFSM Ptot Tstg Tj BAV100 50 60 Rth (j-a) BAV101 100 120 BAV102 150 200 250 250 625 1 5 400 - 65 to +175 175 BAV103 200 250 0.375 UNIT V V mA mA mA A A mW ºC ºC K/mW

ELECTRICAL CHARACTERISTICS

(Ta=25ºC unless otherwise specified)

DESCRIPTION

SYMBOL TEST CONDITION Forward Voltage VF IF=100mA IF=200mA Reverse Breakdown Voltage *VBR IR=100µA BAV100 BAV101 BAV102 BAV103 Reverse Current IR VR= VR max VR= VR max, Tj=150ºC Differential Resistance rdiff IF=10mA MIN MAX UNIT 1.00 V 1.25 V 60 120 200 250 100 100 Typ 5 V V V V nA µA Ω DYNAMIC CHARACTERISTICS Diode Capacitance Reverse Recovery Time Cd VR=0V, f=1MH...
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