Continental Device India BAV70
SILICON PLANAR DUAL SWITCHING DIODES
ABSOLUTE MAXIMUM RATINGS
(Rating Per Diode)DESCRIPTION
Continuous Reverse Voltage SYMBOL VR Repetitive Peak Reverse Voltage Forward Current (DC) Repetitive Peak Forward Current VRRM IF IFRM Non Repetitive Peak Forward Current (per crystal) t=1 µs t=1 ms IFSM IFSM t=1 s IFSM Power Dissipation up to Ta=25ºC Storage Temperature Range Junction Temperature PD Tstg Tj VALUE 70 75 215 450 4.0 1.0 0.5 250 - 55 to +150 150 THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 500ELECTRICAL CHARACTERISTICS
(Ta=25º C unless specified otherwise) per diodeDESCRIPTION
Forward Voltage Reverse Current Diode Capacitance Forward Rec