ABSOLUTE MAXIMUM RATINGS
(Rating Per Diode) DESCRIPTION
SYMBOL Repetitive Peak Reverse Voltage VRRM Reverse Voltage Forward Current (DC) Repetitive Peak Forward Current Non Repetitive Peak Forward Current (per crystal) t=1 µs t=1 ms t=1 s Power Dissipation up to Ta=25ºC Junction Temperature VR IF IFRM IFSM IFSM IFSM PD Tj Ambient Temperature Tamb Storage Temperature Range Tstg THERMAL RESISTANCE Junction to Ambient in free air Junction to Solder Point Rth (j-a) Rth (j-sp) VALUE 100 100 215 500 4.0 1.0 0.5 250 150 - 65 to +150 - 65 to +150 500 360 ELECTRICAL CHARACTERISTICS
(Ta=25º C unless specified otherwise) per diode DESCRIPTION
SYMBOL TEST CONDITION MIN Forward Voltage VF IF = 1mA IF = 10mA IF = 50mA IF = 150mA Reverse Current IR VR=25V VR=25V, TJ=150ºC VR=80V VR=80V, TJ=150ºC MAX 0.715 0.855 1.0 1.25 30 30 0.5 50 UNIT V V mA mA A A A mW ºC ºC ºC K/W K/W UNIT V V V V nA µA µA µA BAV99_Rev_1 200310E Continental Device India Limited Data Sheet Page 1 of 5 SILICON PLANAR HIGH SPEED SW...
Continental Device India
