Continental Device India BC108B
NPN Transistor
| Part No. | BC108B |
|---|---|
| Datasheet | BC108B Download |
| Manufacturer |  Continental Device India |
| Description | NPN Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at T a=25ºC Derate above 25ºC Power Dissipation at T c=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC107 45 50 6.0 BC108 25 30 5.0 200 300 1.72 750 4.29 - 65 to +200 BC109 25 30 5.0 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC Rth (j-a) Rth (j-c) 583 233 ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise )DESCRIPTION
SYMBOL TEST CONDITION V IC=2mA, IB=0 Collector Emitter Voltage CEO VEBO IE=10µA, IC=0 Emitter Base Voltage ICBO VCB=45V, IE=0 Collector Cut Off Current BC107 >45 >6 <15 BC108 >25 >5 <15 BC109 >25 >5 <15 <4 UNIT V V nA nA µA µA VCB=25V, IE=0 VCB=45V, IE=0, Ta=125ºC VCB=25V, IE=0, Ta=125ºC DC Current Gain hFE IC=10µA, VCE=5V B Group C Group IC=2mA, VCE=5V BC107 BC108 BC1...
