BC167B Datasheet PDF | Continental Device India

Continental Device India BC167B

The transistor is overdriven to such an extent that the static forward current transfer ratio has decreased to hFE =20 UNITS dB dB dB kW kW kW 10-4 µ MHO µ MHO µ MHO Continental Device India Limited Data Sheet Page 3 of 5 Solderability Ensured Dimension With 'L' BC167A, BC167B BC168A, BC168B, BC168C BC169B, BC169C TO-92 Plastic Package TO-92 Plastic Package TO-92 Transistors on Tape and Ammo Pack B A Uncontrolled L Beyond 'L' 1 2 3 D AA G K D SEC AA E 21 3 F F 321 C H PIN CONFIGURATION 1.

Part No.	BC167B
Datasheet	BC167B Download
Manufacturer	Continental Device India
Description	NPN Silicon Transistor
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ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL Collector -Emitter Voltage VCEO Collector -Emitter Voltage VCES Emitter -Base Voltage VEBO Collector Current Continuous IC Collector Peak Current ICM Base Current IB Power Dissipation @ Ta=25ºC Ptot Storage Junction Tstg Junction Temperature Tj BC167 BC168 BC169 45 20 20 50 30 30 6.0 5 5 100 100 50 200 200 50 50 5 300 -55 to +150 150 THERMAL RESISTANCE Junction to Ambient Rth(j-a) 420 UNITS V V V mA mA mA mW ºC ºC K/W

ELECTRICAL CHARACTERISTICS

(Ta=25ºC Unless Specified Otherwise)

DESCRIPTION

SYMBOL TEST CONDITION MIN Collector -Emitter Voltage BC167 BVCEO IC=2mA,IB=0 45 BC168, 169 20 Emitter-Base Voltage BC167 BVEBO IE=1µA, IC=0 6 BC168, 169 5 Collector-Cut off Current BC167 ICES VCE=50V,VBE=0 BC168, 169 VCE=30V,VBE=0 Ta =125ºC BC167 VCE=50V,VBE=0 BC168, 169 VCE=30V,VBE=0 TYP MAX UNITS V V V V 15 nA 15 nA 4 µA 4 µA Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSIS...