Continental Device India BC172C
NPN Silicon Planar Transistors
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ Ta=25ºC Derate Above 25ºC Total Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg BC174 BC171 65 80 45 50 6 100 350 2.8 1.0 8.0 -55 to +150 BC172 25 30 UNIT V V V mA mW mW/ºC W mW/ºC ºC Rth(j-a) Rth(j-c) 357 125 ºC/W ºC/WELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector Emitter Breakdown Voltage BC174 BC171 BC172 Emitter Base Breakdown Voltage ALL Collector Cut off Current BC174 BC171 BC172 ICES VCE=70V, VBE = 0 VCE=50V, VBE = 0 VCE=35V, VBE = 0 VCE=30V, VBE = 0, Ta= 125ºC Continental Device India Limited VALUE TYP MAX UNIT BVCEO IC=2mA,IB=0 65 45 25 V V V BVEBO IE=100µA, IC=0 6 15 15 15...