Continental Device India BC177C
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC177C |
|---|---|
| Datasheet | BC177C Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 degC Derate Above 25 deg C Power Dissipation@ Tc=25 degC Derate Above 25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case SYMBOL VCEO VCES VCBO VEBO IC PD PD Tj, Tstg Rth(j-c) BC177 BC178 45 25 50 30 50 30 5.0 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 BC179 20 25 25 5.0 UNIT V V V V A W mW/deg C W mW/deg C deg C 175 deg C/WELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION Collector-Cut off Current ICES VCE=20V, IE=0 Tamb=125 deg C VCE=20V, IE=0 Collector -Base Voltage VCBO IC=10uA, IE=0 BC177 BC178 BC179 MIN T
