• Part: BC183
  • Description: NPN SILICON PLANAR EPITAXIAL TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 107.24 KB
Download BC183 Datasheet PDF
Continental Device India
BC183
BC183 is NPN SILICON PLANAR EPITAXIAL TRANSISTORS manufactured by Continental Device India.
DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC182 50 60 BC183 30 45 6.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 125 357 ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2m A, IB=0 BC182 Collector Base Voltage VCBO BC183/BC184...