Continental Device India BC238
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)DESCRIPTION
SYMBOL Collector Emitter Voltage VCEO Collector Emitter Voltage Emitter Base Voltage VCES VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Temperature Range Tj, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 THERMAL RESISTANCE Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 357 125ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage VCEO IC=2mA, IB=0 BC237 Emitter Base Voltage VEBO BC238/BC239 IE=10µA,