Continental Device India BC307C
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC307C |
|---|---|
| Datasheet | BC307C Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL BC307 BC308 BC309 Collector Emitter Voltage Collector Base Voltage VCEO VCBO 45 25 25 50 30 30 Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC VEBO IC PD 555 100 350 Derate Above 25ºC 2.8 Power Dissipation@ Tc=25ºC PD 1 Derate Above 25ºC 8 Operating And Storage Junction Tj, Tstg -55 to +150 Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 357 125 UNITS V V V mA mW mW/°C W mW/°C °C °C/W °C/W Continental Device India Limited Data Sheet Page 1 of 5 SILICON PLANAR EPITAXIAL TRANSISTORS BC 307, A, B, C BC
