Datasheet Details
| Part number | BC337A |
|---|---|
| Manufacturer | CDIL |
| File Size | 225.13 KB |
| Description | PNP/NPN Silicon Planar Epitaxial Transistors |
| Download | BC337A Download (PDF) |
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Overview: www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.
Download the BC337A datasheet PDF. This datasheet also includes the BC337 variant, as both parts are published together in a single manufacturer document.
| Part number | BC337A |
|---|---|
| Manufacturer | CDIL |
| File Size | 225.13 KB |
| Description | PNP/NPN Silicon Planar Epitaxial Transistors |
| Download | BC337A Download (PDF) |
|
|
|
SYMBOL Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Current Continuous Peak Emitter Current Peak Base Current Continuous Base Current Peak Power Dissipation@ Ta=25 deg C Derate Above 25 deg C Operating & Storage Junction Temperature Range THERMAL RESISTANCE From Junction to Ambient in Free Air VCE0 VCES VEBO IC ICM IEM IB IBM PTA BC327 BC337 45 50 BC327A BC337A 60 60 5.0 800 1.0 1.0 100 200 625 5 -65 to +150 BC328 BC338 25 30 UNITS DataSheet4U.com Tj, Tstg V V V mA A A mA mA mW ataShee DC mW/deg deg C Rth(j-a) 200 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BC327 BC337 VCEO IC=10mA,IB=0 >45 Collector -Emitter Voltage VCES IC=100uA.IE=0 >50 VEBO IE=10uA, IC=0 Emitter-Base Voltage ICBO VCB=20V, IE=0 Collector-Cut off Current VCB=20V, IE=0, TJ=150deg C IEBO VEB=5V, IC=0 Emitter Cut off Current hFE* IC=500mA,VCE=1V DC Current Gain .
IC=100mA,VCE=1V 100-600 63-160 Group-10 100-250 Group-16 160-400 Group-25 250-600 Group-40 VCE(Sat) * IC=500mA,IB=50mA Collector Emitter Saturation Voltage VBE(on) * IC=500mA,VCE=1V Base Emitter on Voltage DYNAMIC CHARACTERISTICS ft IC=10mA,VCE=5V Transistors Frequency NPN f=35MHz PNP Cob VCB=10V, f=1MHz NPN Out-Put Capacitance PNP CYCLE=2% *Pulse Test : Pulse Width =300us, Duty DataSheet4U.com Continental Device India Limited Data Sheet BC327A BC328 BC337A BC338 >60 >25 >60 >30 >5.0 <100 <5.0 <10 >40 100-400 100-600 63-160 100-250 160-400 250-600 <0.70 <1.20 Typ 200 Typ 100 Typ 5.0 Typ 8.0 UNITS V V V nA uA uA V V MH
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BC337 | NPN Transistor | INCHANGE |
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BC337 | Amplifier Transistor | Motorola Inc |
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BC337 | NPN Epitaxial Silicon Transistor | ON Semiconductor |
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BC337 | 500mA NPN general-purpose transistors | NXP |
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BC337 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| Part Number | Description |
|---|---|
| BC338 | PNP/NPN Silicon Planar Epitaxial Transistors |
| BC300 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| BC301 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| BC302 | (BC300 - BC302) NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
| BC303 | PNP EXPITAXIAL PLANAR SILICON TRANSISTORS |
| BC304 | PNP EXPITAXIAL PLANAR SILICON TRANSISTORS |
| BC307 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC307A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC307B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BC307C | SILICON PLANAR EPITAXIAL TRANSISTORS |