BC414C - NPN SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Download the BC414C datasheet PDF. This datasheet also covers the BC413 variant, as both devices belong to the same npn silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45

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BC414C npn silicon planar epitaxial transistors by CDIL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC413-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC414C
Manufacturer	CDIL
File Size	350.18 KB
Description	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC414C Datasheet

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Other Datasheets by CDIL

Part Number	Description
BC414	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC414B	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413B	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413C	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC413, B, C BC414, B, C TO-92 Plastic Package CB E ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC Derate Above 25ºC Power Dissipation at Tc=25ºC VCEO VCBO VEBO IC PD PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC413 30 45 5.0 100 350 2.8 1.0 8.