Continental Device India BC448B
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO 5 Collector Current Continuous IC 300 Total Device Dissipation@ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range TYP 80 80 5 625 5 1.5 12 -55 to +150 MAX 100 100 5 THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 83.3 UNITS V V V mA mW mW/ ºC W mW/ ºC ºC ºC/W ºC/W Continental Device India Limited Data Sheet Page 1 of 4 SILICON PLANAR EPITAXIAL TRANSISTORS BC 446, A, B BC 448, A,