BC450 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

General Description

SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO 5 Collector Current Continuous IC 300 Total Device Dissipation@ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And S

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BC450 pnp silicon planar epitaxial transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	BC450
Manufacturer	CDIL
File Size	58.26 KB
Description	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC450 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BC450A	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC450B	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC413	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413B	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC413C	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

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Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS IS/ISO 9002 Lic# QSC/L- 000019.2 BC 446, A, B BC 448, A, B BC 450, A, B TO-92 Plastic Package General Purpose High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO 5 Collector Current Continuous IC 300 Total Device Dissipation@ Ta=25ºC PD Derate Above 25ºC Total Device Dissipation@ Tc=25ºC PD Derate Above 25ºC Operating And Storage Junction Tj, Tstg Temperature Range TYP 80 80 5 625 5 1.