Continental Device India BC485B
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC485B |
|---|---|
| Datasheet | BC485B Download |
| Manufacturer |  Continental Device India |
| Description | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC)DESCRIPTION
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta=25ºC VCEO VCBO VEBO IC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range TJ, Tstg BC485 45 45 BC487 60 60 5.0 1.0 625 5.0 1,5 12 - 55 to +150 BC489 80 80 THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 83.3 200ELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current DC Current Gain VCEO VCBO VEBO ICBO hFE IC=1mA
