BC556C
DESCRIPTION
Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current
- Peak Emitter Current
- Peak Collector Power Dissipation Ta =25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient SYMBOL VCEO VCES VCBO VEBO IC ICM IBM IEM PTA Tj, Tstg BC556 65 80 80 5 BC557 45 50 50 5 100 200 200 200 500 -55 to +150 BC558 30 30 30 5 UNITS V V V V m A m A m A m A m W ºC
.
Data Shee
Rth(j-a)
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION
Collector Emitter Voltage BC556 BC557 BC558 VCEO IC=2m A,IB=0 65 45 30 V V V SYMBOL TEST CONDITION MIN TYP MAX UNITS
.
Continental Device India Limited Datasheet Page 1 of 5
. Data Sheet 4 U .
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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC556, A, B, C BC557, A, B, C BC558, A, B, C TO-92 Plastic Package
DESCRIPTION
Collector Base Voltage BC556 BC557 BC558 Emitter Base Voltage Collector Cut off...
