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BC559C - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Download the BC559C datasheet PDF. This datasheet also covers the BC560 variant, as both devices belong to the same pnp silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL BC559 BC560 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Ts

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC560-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC559C
Manufacturer CDIL
File Size 115.78 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC559C Datasheet

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Other Datasheets by CDIL

Part Number Description
BC559 PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC559B PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC550 NPN Transistor
BC550A NPN Transistor
BC550B NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC559 BC560 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 30 45 30 50 55 100 625 5 1.5 12 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 ºC/W 83.