Continental Device India BC559C
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC559C |
|---|---|
| Datasheet | BC559C Download |
| Manufacturer |  Continental Device India |
| Description | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL BC559 BC560 UNITS Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Tc=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD PD Tj, Tstg 30 45 30 50 55 100 625 5 1.5 12 -55 to +150 V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to ambient Junction to case Rth(j-a) Rth(j-c) 200 ºC/W 83.3 ºC/W Continental Device India Limited Data Sheet Page 1 of 5 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC559, B, C BC560, B, C TO-92 Plastic PackageELECTRICAL CHARACTERISTICS
(Ta=25ºC Unless Specified Otherwise)DESCRIPTION
SYMBOL TEST
