BC808-40 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Download the BC808-40 datasheet PDF. This datasheet also covers the BC807 variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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BC808-40 silicon planar epitaxial transistors by CDIL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC807-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC808-40
Manufacturer	CDIL
File Size	192.65 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC808-40 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BC808-16	SILICON PLANAR EPITAXIAL TRANSISTORS
BC808-25	SILICON PLANAR EPITAXIAL TRANSISTORS
BC808	SILICON PLANAR EPITAXIAL TRANSISTORS
BC846	NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC846A	NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistor Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808 = 5H BC808–16 = 5E BC808–25 = 5F BC808–40 = 5G Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V –VCES –VCE0 –ICM Ptot Tj BC807 max. 50 max. 45 max. max. max.