ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise) DESCRIPTION
SYMBOL BC846 Collector Base Voltage VCBO 80 Collector Emitter Voltage (VBE=0V) VCES 80 Collector Emitter Voltage VCEO 65 Emitter Base Voltage VEBO 6 Collector Current (DC) IC Collector Current - Peak ICM Emitter Current - Peak - IEM Base Current - Peak IBM Power Dissipation upto Tamb=25ºC Storage Temperature Ptot* Tstg Junction Temperature Tj BC847 50 BC848 30 50 30 45 30 65 100 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS P IN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 BC846, BC847, BC848 SOT-23 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T" ABSOLUTE MAXIMUM RATINGS
(Ta=25ºC unless specified otherwise) DESCR...