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BC847 Datasheet PDF

Continental Device India BC847

The product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. BC847
Datasheet BC847 Download
Manufacturer
Continental Device India
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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BC847 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL BC846 Collector Base Voltage VCBO 80 Collector Emitter Voltage (VBE=0V) VCES 80 Collector Emitter Voltage VCEO 65 Emitter Base Voltage VEBO 6 Collector Current (DC) IC Collector Current - Peak ICM Emitter Current - Peak - IEM Base Current - Peak IBM Power Dissipation upto Tamb=25ºC Storage Temperature Ptot* Tstg Junction Temperature Tj BC847 50 BC848 30 50 30 45 30 65 100 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limited Data Sheet Page 1 of 5 NPN SILICON PLANAR EPITAXIAL TRANSISTORS P IN CONFIGURATION (NPN) 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 BC846, BC847, BC848 SOT-23 Formed SMD Package For Lead Free Parts, Device Part # will be Prefixed with "T"

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless specified otherwise) DESCR...
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