Continental Device India BC857
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BC857 |
|---|---|
| Datasheet | BC857 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 60 °C Junction temperature Small–signal current gain –IC = 2 mA; –VCE = 5 V; f = 1 kHz Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE = 5 V f = 1 kHz; B = 200 Hz BC856 BC857 BC858 –VCEX max. 80 –VCE0 max. 65 –ICM max. 50 30 V 45 30 V 200 mA Ptot max. Tj max. 250 mW 150 °C hfe 75 to 900 fT > 100 MHz F < 10 dB Continental Device India Limited Data Sheet Page 1 of 3 BC856 BC857 BC858 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Collector current (peak value) Emitter current (peak value) Base current (peak value) Total power dissipation up to Tamb: 60 °C Storage temperat...
