BC858 - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Download the BC858 datasheet PDF. This datasheet also covers the BC856 variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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BC858 silicon planar epitaxial transistors by CDIL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BC856-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BC858
Manufacturer	CDIL
File Size	76.69 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BC858 Datasheet

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Other Datasheets by CDIL

Part Number	Description
BC858W	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC856	SILICON PLANAR EPITAXIAL TRANSISTORS
BC856W	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC857	SILICON PLANAR EPITAXIAL TRANSISTORS
BC857W	PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 60 °C Junction temperature Small–signal current gain –IC = 2 mA; –VCE = 5 V; f = 1 kHz Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kW –IC = 200 mA; –VCE =