| Part number | BCW30 |
|---|---|
| Download | BCW30 Datasheet (PDF) |
| File Size | 76.04 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
BCW30 | SMALL SIGNAL PNP TRANSISTORS |
Fairchild |
BCW30 | PNP General Purpose Amplifier |
NXP Semiconductors |
BCW30 | PNP general purpose transistors |
Diotec Semiconductor |
BCW30 | Surface mount Si-Epitaxial PlanarTransistors |
Galaxy Microelectronics |
BCW30 | PNP General Purpose Amplifier |
current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector base voltage (open emitter) Collector emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz IC = 10 mA; VCE = 5 V Noise figure at RS = 2 kW Ic = 200 mA;.
