BCW30 datasheet by Continental Device India.
| Part number | BCW30 |
|---|---|
| Datasheet | BCW30-CDIL.pdf |
| File Size | 76.04 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector base voltage (open emitter) Collector emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz IC = 10 mA; VCE = 5 V Noise figure at RS = 2 kW Ic = 200 mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BCW30 | SMALL SIGNAL PNP TRANSISTORS | STMicroelectronics |
 |
BCW30 | PNP General Purpose Amplifier | Fairchild Semiconductor |
 |
BCW30 | PNP general purpose transistors | NXP |
 |
BCW30 | Surface mount Si-Epitaxial PlanarTransistors | Diotec Semiconductor |
 |
BCW30 | PNP General Purpose Amplifier | GME |
View all Continental Device India datasheets
| Part Number | Description |
|---|---|
| BCW29 | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60D | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61D | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW65A | GENERAL PURPOSE TRANSISTOR |
