| Part number | BCW60B |
|---|---|
| Download | BCW60B Datasheet (PDF) |
| File Size | 79.00 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
|
|
| Manufacturer | Part Number | Description |
|---|---|---|
Samsung Semiconductor |
BCW60B | NPN EPITAXIAL SILICON TRANSISTOR |
NXP Semiconductors |
BCW60B | NPN general purpose transistors |
Siemens Semiconductor Group |
BCW60B | NPN Silicon AF Transistors |
Motorola Semiconductor |
BCW60B | GENERAL PURPOSE TRANSISTOR |
Infineon |
BCW60B | NPN Silicon AF Transistors |
IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; B = 200Hz VCES VCE0 IC Ptot Tj fT F max. 25 °C Storage temperature Junction temperature From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector emitter cut off current VBE =.
