| Part number | BCW60D |
|---|---|
| Download | BCW60D Datasheet (PDF) |
| File Size | 79.00 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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| Manufacturer | Part Number | Description |
|---|---|---|
Infineon |
BCW60D | NPN Silicon AF Transistors |
Samsung Semiconductor |
BCW60D | NPN EPITAXIAL SILICON TRANSISTOR |
NXP Semiconductors |
BCW60D | NPN general purpose transistors |
Siemens Semiconductor Group |
BCW60D | NPN Silicon AF Transistors |
Galaxy Microelectronics |
BCW60D | NPN General Purpose Amplifier |
IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; B = 200Hz VCES VCE0 IC Ptot Tj fT F max. 25 °C Storage temperature Junction temperature From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector emitter cut off current VBE =.
