BCW60D datasheet by Continental Device India.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BCW60D |
|---|---|
| Datasheet | BCW60D BCW60A Datasheet (PDF) |
| File Size | 79.00 KB |
| Manufacturer | Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
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IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; B = 200Hz VCES VCE0 IC Ptot Tj fT F max. 25 °C Storage temperature Junction temperature From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector emitter cut off current VBE =.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BCW60D | NPN Silicon AF Transistors | Infineon |
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BCW60D | NPN EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor |
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BCW60D | NPN general purpose transistors | NXP |
 |
BCW60D | NPN Silicon AF Transistors | Siemens Semiconductor Group |
 |
BCW60D | NPN General Purpose Amplifier | GME |
View all Continental Device India datasheets
| Part Number | Description |
|---|---|
| BCW60A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW60C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61A | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61B | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61C | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW61D | SILICON PLANAR EPITAXIAL TRANSISTORS |
| BCW65A | GENERAL PURPOSE TRANSISTOR |
| BCW65B | GENERAL PURPOSE TRANSISTOR |
| BCW65C | GENERAL PURPOSE TRANSISTOR |
