BCW61D - SILICON PLANAR EPITAXIAL TRANSISTORS

CDIL

Download the BCW61D datasheet PDF. This datasheet also covers the BCW61A variant, as both devices belong to the same silicon planar epitaxial transistors family and are provided as variant models within a single manufacturer datasheet.

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BCW61D silicon planar epitaxial transistors by CDIL - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BCW61A-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BCW61D
Manufacturer	CDIL
File Size	79.69 KB
Description	SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet	BCW61D Datasheet

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Other Datasheets by CDIL

Part Number	Description
BCW61A	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW61B	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW61C	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60A	SILICON PLANAR EPITAXIAL TRANSISTORS
BCW60B	SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC BCW61D = BD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f: 100 MHz –VCE = 5 V; –IC = 10 mA Noise figure at f = 1 kHz –VCE = 5 V; –IC = 200 mA –VCES –VCEO –IC Ptot Tj max. max. max. max. max. 32 V 32 V 200 mA 250 mW 150 °C fT typ. 180 MHz F typ.