Continental Device India BCX38A
NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO ICM IC PD Tj, Tstg VALUE 60 80 10 2 800 625 - 55 to +200 UNITS V V V A mA mW ºCELECTRICAL CHARACTERISTICS
(Ta=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO (sus) IC=10mA, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut off Current ICBO VCB=60V, IE = 0 Emitter Cut off Current IEBO VEB=8V, IC = 0 Collector Emitter Saturation Voltage *VCE(sat) IC=800mA, IB=8mA Base Emitter On Voltage *VBE(on) IC=800mA,