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BCX38C - NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS

Download the BCX38C datasheet PDF. This datasheet also covers the BCX38A variant, as both devices belong to the same npn silicon planar epitaxial darlington transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO ICM IC PD Tj, Tstg VALUE 60 80 10 2 800 625 - 55 to +200 UNITS V V V A mA mW ºC

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Note: The manufacturer provides a single datasheet file (BCX38A-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BCX38C
Manufacturer CDIL
File Size 90.89 KB
Description NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS
Datasheet download datasheet BCX38C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS BCX38A BCX38B BCX38C TO-92 Plastic Package EBC ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Peak Pulse Current Collector Current Continuous Power Dissipation @ Ta=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO ICM IC PD Tj, Tstg VALUE 60 80 10 2 800 625 - 55 to +200 UNITS V V V A mA mW ºC ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage VCEO (sus) IC=10mA, IB=0 Collector Base Voltage VCBO IC=10µA, IE=0 Emitter Base Voltage VEBO IE=10µA, IC=0 Collector Cut