Continental Device India BD177
EPITAXIAL SILICON POWER TRANSISTORS
| Part No. | BD177 |
|---|---|
| Datasheet | BD177 Download |
| Manufacturer |  Continental Device India |
| Description | EPITAXIAL SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
TO126 Plastic PackageABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 BD177 BD178 60 60 5.0 3.0 7.0 1.25 10 30 - 65 to +150 BD179 BD180 80 80 UNIT V V V A A W mW/ºC W ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c)ELECTRICAL CHARACTERISTICS
(Tc=25ºC unless specified otherwise)DESCRIPTION
SYMBOL TEST CONDITION Collector Cut off Current ICBO VCB=45V, IE=0 VCB=60V, IE=0 Emitter Cut off Current Colle
