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BD177 - EPITAXIAL SILICON POWER TRANSISTORS

Download the BD177 datasheet PDF. This datasheet also covers the BD180 variant, as both devices belong to the same epitaxial silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BD180-CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BD177
Manufacturer CDIL
File Size 90.50 KB
Description EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD177 Datasheet

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Other Datasheets by CDIL

Part Number Description
BD170 PNP PLASTIC POWER TRANSISTORS
BD175 EPITAXIAL SILICON POWER TRANSISTORS
BD176 EPITAXIAL SILICON POWER TRANSISTORS
BD178 EPITAXIAL SILICON POWER TRANSISTORS
BD179 EPITAXIAL SILICON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD175 BD177 BD179 NPN BD176 BD178 BD180 PNP ECB Intended for use in Medium Power Linear Switching Applications TO126 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 BD177 BD178 60 60 5.0 3.0 7.0 1.