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BD434 - EPITAXIAL SILICON POWER TRANSISTORS

This page provides the datasheet information for the BD434, a member of the BD433 EPITAXIAL SILICON POWER TRANSISTORS family.

Datasheet Summary

Description

SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Collector Peak Current (t=10ms_ ICM Base Current IB Total Dissipation @ TC=25ºC PD Total Dissipation @ Ta=25ºC Derate above 25ºC PD Opera

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Datasheet preview – BD434

Datasheet Details

Part number BD434
Manufacturer CDIL
File Size 92.83 KB
Description EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet BD434 Datasheet
Additional preview pages of the BD434 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD433 BD435 BD437 BD439 BD441 NPN BD434 BD436 BD438 BD440 BD442 PNP TO126 Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Collector Peak Current (t=10ms_ ICM Base Current IB Total Dissipation @ TC=25ºC PD Total Dissipation @ Ta=25ºC Derate above 25ºC PD Operating and Storage Junction Temperature Range Tj, Tstg BD433 BD434 22 22 22 BD435 BD436 32 32 32 BD437 BD438 45 45 45 5.0 4.0 7.0 1.0 36.0 1.
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