BF240 - NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS

CDIL

General Description

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Dereate Above 25 deg C Power Dissipation@ Tc=25ºC Dereate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg Value 40 40 4 25

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BF240 npn silicon planar epitaxial rf transistors by CDIL - Datasheet Preview

Datasheet Details

Part number	BF240
Manufacturer	CDIL
File Size	326.95 KB
Description	NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
Datasheet	BF240 Datasheet

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Part Number	Description
BF241	NPN Silicon Transistor
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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS BF240 BF241 TO-92 Plastic Package E BC A.M.Mixer, IF Amplifiers in AM/ FM Receiver Applications ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless otherwise specified) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Dereate Above 25 deg C Power Dissipation@ Tc=25ºC Dereate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg Value 40 40 4 25 350 2.8 1 8.