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BF241 Datasheet PDF

Continental Device India BF241

The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application.
Part No. BF241
Datasheet BF241 Download
Manufacturer
Continental Device India
Description NPN Silicon Transistor
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BF241 datasheet page 1 preview

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC unless otherwise specified)

DESCRIPTION

Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25ºC Dereate Above 25 deg C Power Dissipation@ Tc=25ºC Dereate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg Value 40 40 4 25 350 2.8 1 8.0 -55 to +150 UNITS V V V mA mW mW/ ºC W mW/ ºC ºC

ELECTRICAL CHARACTERISTICS

(Ta=25ºC Unless Otherwise Specified)

DESCRIPTION

Collector Emitter Voltage Collector Base Voltage EmitterBase Voltage Collector-Cut off Current Base Emitter On Voltage DC Current Gain BF240 BF241 Transition Frequency BF240 BF241 Feedback Capacitance Cre VCB=10V, IE=0 , f=1MHz *Pulse Test: Pulse Width < 300us, Duty Cycle < 2%. fT IC=1mA, VCE=10V f=100MHz 600 470 0.28 0.34 MHz MHz pF SYMBOL BVCEO * BVCBO BVEBO ICBO VBE(on) hFE TEST CONDITION IC=1mA,IB=0 IC=100uA.IE=0 IE=10uA, IC=0 VCB=20V,IE=0 IC=1mA,VCE=10V IC=1mA,VCE=...
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